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| MICROWAVE CORPORATION v02.0604 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Features Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5.0 V Power Down Capability 3x3 mm Leadless SMT Package 8 AMPLIFIERS - SMT Typical Applications The HMC408LP3 is ideal for: * 802.11a & HiperLAN WLAN * UNII & Pt-Pt / Multi-Pt. Radios * Access Point Radios Functional Diagram General Description The HMC408LP3 is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5.0V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance. Electrical Specifications, TA = +25 C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss* Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Harmonics, Pout= 30 dBm, F= 5.8 GHz Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Vpd= 0V/5V Vpd= 5V tOn, tOff 2 fo 3 fo 40 Icq= 750 mA Icq= 500 mA 27 17 Min. Typ. 5.7 - 5.9 20 0.045 8 14 30 27 32.5 43 -50 -90 6 0.002 / 750 14 50 36 24 0.055 17 Max. Min. Typ. 5.1 - 5.9 20 0.045 8 6 27 23 31 39 -50 -90 6 0.002 / 750 14 50 0.055 Max. Units GHz dB dB/C dB dB dBm dBm dBm dBc dBc dB mA mA ns * Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 164 MICROWAVE CORPORATION v02.0604 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Broadband Gain & Return Loss 25 20 15 Gain vs. Temperature 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4.8 8 AMPLIFIERS - SMT 8 - 165 RESPONSE (dB) 10 5 0 -5 -10 -15 -20 -25 3 4 5 S21 S22 GAIN (dB) S11 +25 C +85 C -40 C 6 7 8 5 5.2 5.4 5.6 5.8 6 6.2 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature* 0 -4 RETURN LOSS (dB) RETURN LOSS (dB) -5 -8 -10 -12 +25 C +85 C -40 C -15 +25 C +85 C -40 C -16 -20 4.8 5 5.2 5.4 5.6 5.8 6 6.2 -20 4.8 5 5.2 5.4 5.6 5.8 6 6.2 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 36 33 30 Psat vs. Temperature 36 33 30 P1dB (dBm) 24 21 18 15 12 4.8 +25 C +85 C -40 C Psat (dBm) 27 27 24 21 18 15 12 4.8 +25 C +85 C -40 C 5 5.2 5.4 5.6 5.8 6 6.2 5 5.2 5.4 5.6 5.8 6 6.2 FREQUENCY (GHz) FREQUENCY (GHz) * Output match optimized for 5.7 - 5.9 GHz. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0604 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz 8 AMPLIFIERS - SMT Power Compression @ 5.8 GHz 36 Output IP3 vs. Temperature 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 4.8 Pout (dBm), GAIN (dB), PAE (%) 33 30 27 24 21 18 15 12 9 6 3 Pout (dBm) Gain (dB) PAE (%) OIP3 (dBm) +25 C +85 C -40 C 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 5 5.2 5.4 5.6 5.8 6 6.2 INPUT POWER (dBm) FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 Gain & Power vs. Supply Voltage @ 5.8 GHz 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 4.75 7 6 5 4 3 +25 C GAIN (dB), P1dB (dBm), Psat (dBm) NOISE FIGURE (dB) Gain P1dB Psat 2 1 0 4.8 5 5.2 5.4 5.6 5.8 +85 C -40 C 6 6.2 5 Vcc Supply Voltage (Vdc) 5.25 FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz 36 800 700 600 500 GAIN (dB), P1dB (dBm), Psat (dBm) -10 33 30 27 24 21 18 15 12 Gain P1dB Psat Icq ISOLATION (dB) -20 -30 -40 -50 -60 4.8 Reverse Isolation Power Down Isolation Icq (mA) 400 300 200 100 0 5 5.2 5.4 5.6 5.8 6 6.2 3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 FREQUENCY (GHz) Vpd (Vdc) 8 - 166 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0604 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) Control Voltage (Vpd) RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 72.5 mW/C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc +5.5 Vdc +20 dBm 150 C 4.71 W Typical Supply Current vs. Vs= Vcc1 + Vcc2 Vs (V) 4.75 5.0 5.25 Icq (mA) 725 750 780 8 AMPLIFIERS - SMT 8 - 167 Note: Amplifier will operate over full voltage range shown above 13.8 C/W -65 to +150 C -40 to +85 C Outline Drawing NOTES: 1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY 3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0604 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description Interface Schematic 1 Vpd Power control pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 5 - 8, 12, 13, 15 N/C No Connection 3 RF IN This pin AC coupled and matched to 50 Ohms from 5.1 - 5.9 GHz. 9, 10, 11 RF OUT RF output and DC bias for the output stage. 14 Vcc2 Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic. 16 Vcc1 Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 8 - 168 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.0604 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1 - J2 J3 C1 - C4 C5 - C7 C8 C9 - C10 C11 L1 - L2 U1 PCB* Description PC Mount SMA RF Connector 2 mm DC Header 1,000 pF Capacitor, 0603 Pkg. 100 pF Capacitor, 0402 Pkg. 2.2 F Tantalum Capacitor 0.5 pF Capacitor, 0603 Pkg. 10 pF Capacitor, 0402 Pkg. 1.6 nH Inductor, 0603 Pkg. HMC408LP3 Amplifier 104629 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 169 MICROWAVE CORPORATION v02.0604 HMC408LP3 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz 8 AMPLIFIERS - SMT Application Circuit Recommended Component Values L1, L2 C1 - C4 C5 - C7 C8 C9 - C10 1.6 nH 1,000 pF 100 pF 2.2 F 0.5 pF Impedance Length TL1 50 Ohm 0.200" TL2 50 Ohm 0.100" Note 1: C9, C10 should be located < 0.020" from pins 9, 10, & 11. Note 2: Application circuit values shown are optimized for 5.7 - 5.9 GHz operation. Contact our Applications Engineers for optimization of output match for other frequencies. 8 - 170 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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